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Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2525AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage IN Collector-emitter voltage Collector current (DC) ANG CH EMIC ES Open emitter Open base CONDITIONS OND TOR UC VALUE 1500 800 12 30 8 12 UNIT V V A A A A W ae ae Collector current -peak Base Collector current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25ae 45 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN BU2525AF SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=1mA ;IC=0 IC=8A ;IB=1.6 A 7.5 13.5 V Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=1.6 A VCE=BVCES; VBE=0 Tj=125ae VEB=7.5V; IC=0 1.1 1.0 2.0 1.0 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain hFE-2 CC DC current gain Collector capacitance ANG CH IC=0.1A ; VCE=5V 13 IC=8A ; VCE=5V IE=0; f=1MHz;VCB=10V 5 IN EMIC ES OND TOR UC 7 9.5 145 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2525AF SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 |
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