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DAN2222E BUT11AF ST662ABN DG413 7447024 STPR6 N4001 0XS16
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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2525AF
DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of large screen colour TV receivers.
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER

Collector-base voltage
IN
Collector-emitter voltage
Collector current (DC)
ANG CH
EMIC ES
Open emitter Open base
CONDITIONS
OND
TOR UC
VALUE 1500 800 12 30 8 12
UNIT V V A A A A W ae ae
Collector current -peak Base Collector current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25ae
45 150 -65~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN
BU2525AF
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
800
V
V(BR)EBO VCEsat
Emitter-base breakdown voltage
IE=1mA ;IC=0 IC=8A ;IB=1.6 A
7.5
13.5
V
Collector-emitter saturation voltage
5.0
V
VBEsat
Base-emitter saturation voltage
IC=8A ;IB=1.6 A VCE=BVCES; VBE=0 Tj=125ae VEB=7.5V; IC=0
1.1 1.0 2.0 1.0
V
ICES
Collector cut-off current
mA
IEBO
Emitter cut-off current
mA
hFE-1
DC current gain
hFE-2 CC
DC current gain
Collector capacitance
ANG CH
IC=0.1A ; VCE=5V
13
IC=8A ; VCE=5V IE=0; f=1MHz;VCB=10V
5
IN
EMIC ES
OND
TOR UC
7 9.5 145
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU2525AF
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.30mm)
3


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